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SMALL‐Hysteresis Thin‐Film Transistors Achieved by Facile Dip‐Coating of Nanotube/Polymer Composite
Author(s) -
Liu Zhiying,
Li Hui,
Qiu Zhijun,
Zhang ShiLi,
Zhang ZhiBin
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200906
Subject(s) - materials science , carbon nanotube , thin film transistor , hysteresis , composite number , coating , transistor , polymer , dip coating , carbon nanotube field effect transistor , thin film , composite film , composite material , nanotube , nanotechnology , optoelectronics , layer (electronics) , field effect transistor , voltage , electrical engineering , physics , quantum mechanics , engineering
Small‐hysteresis, high‐performance thin‐film transistors (TFTs) are readily realized simply by dip‐coating of a solution‐processable composite. The composite consists of single‐walled carbon nanotubes (SWCNTs) embedded in semiconducting polymer used as the channel material. The resultant TFTs simultaneously exhibit large on/off current ratio, high on‐current level, high mobility in the range 10−20 cm 2 V −1 s −1 , and good uniformity and scalability.
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