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Extremely Narrow Violet Photoluminescence Line from Ultrathin InN Single Quantum Well on Step‐Free GaN Surface
Author(s) -
Akasaka Tetsuya,
Gotoh Hideki,
Kobayashi Yasuyuki,
Yamamoto Hideki
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200871
Subject(s) - materials science , photoluminescence , monolayer , optoelectronics , wavelength , quantum well , quantum dot , nanotechnology , optics , physics , laser
An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step‐free GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large enough for state‐of‐the‐art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect.