Transparent Nanoscale Floating Gate Memory Using Self‐Assembled Bismuth Nanocrystals in Bi 2 Mg 2/3 Nb 4/3 O 7  (BMN) Pyrochlore Thin Films Grown at Room Temperature | Zendy

Jung HyunJune | Zendy; Yoon SoonGil | Zendy; Hong SoonKu | Zendy; Lee JeongYong | Zendy

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Transparent Nanoscale Floating Gate Memory Using Self‐Assembled Bismuth Nanocrystals in Bi 2 Mg 2/3 Nb 4/3 O 7 (BMN) Pyrochlore Thin Films Grown at Room Temperature

Author(s) -

Jung HyunJune,

Yoon SoonGil,

Hong SoonKu,

Lee JeongYong

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201200707

Subject(s) - bismuth , materials science , nanocrystal , nanoscopic scale , nanoparticle , pyrochlore , interface (matter) , substrate (aquarium) , dielectric , layer (electronics) , nanotechnology , optoelectronics , metallurgy , physics , composite material , oceanography , phase (matter) , quantum mechanics , capillary number , capillary action , geology

Bismuth nanocrystals for a nanoscale floating gate memory device are self‐assembled in Bi 2 Mg 2/3 Nb 4/3 O 7 (BMN) dielectric films grown at room temperature by radio‐frequency sputtering. The TEM cross‐sectional image shows the “real” structure grown on a Si (001) substrate. The image magnified from the dotted box (red color) in the the cross‐sectional image clearly shows bismuth nanoparticles at the interface between the Al 2 O 3 and HfO 2 layer (right image). Nanoparticles approximately 3 nm in size are regularly distributed at the interface.

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