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High‐Performance Non‐Volatile Organic Ferroelectric Memory on Banknotes
Author(s) -
Khan M.A.,
Bhansali Unnat S.,
Alshareef H. N.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200626
Subject(s) - materials science , ferroelectricity , non volatile memory , polarization (electrochemistry) , fluoride , optoelectronics , ferroelectric polymers , polymer , leakage (economics) , voltage , data retention , composite material , electrical engineering , inorganic chemistry , dielectric , chemistry , macroeconomics , economics , engineering
High‐performance non‐volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times.