Premium
Bias Stress Effect in “Air‐Gap” Organic Field‐Effect Transistors
Author(s) -
Chen Y.,
Podzorov V.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200455
Subject(s) - materials science , semiconductor , trapping , organic field effect transistor , field effect transistor , dipole , optoelectronics , organic semiconductor , dielectric , transistor , air gap (plumbing) , stress (linguistics) , condensed matter physics , chemistry , voltage , composite material , physics , ecology , linguistics , philosophy , organic chemistry , biology , quantum mechanics
The origin of the bias stress effect related only to semiconductor properties is investigated in “air‐gap” organic field‐effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the semiconductor increases. A theoretical model based on carrier trapping and relaxation in localized tail states is formulated. Polar molecular vapors in the gap of “air‐gap” OFETs also have a significant impact on the bias stress effect via the formation of bound states between the charge carriers and molecular dipoles at the semiconductor surface.