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A Light‐Controlled Resistive Switching Memory
Author(s) -
Ungureanu Mariana,
Zazpe Raul,
Golmar Federico,
Stoliar Pablo,
Llopis Roger,
Casanova Felix,
Hueso Luis E.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200382
Subject(s) - materials science , optoelectronics , voltage , substrate (aquarium) , resistive random access memory , resistive touchscreen , layer (electronics) , pulse (music) , nanotechnology , electrical engineering , engineering , geology , oceanography
Sketch of the configuration of a light‐controlled resistive switching memory. Light enters through the Al 2 O 3 uncovered surface and reaches the optically active p‐Si substrate, where carriers are photogenerated and subsequently injected in the Al 2 O 3 layer when a suitable voltage pulse is applied. The resistance of the Al 2 O 3 can be switched between different non‐volatile states, depending on the applied voltage pulse and on the illumination conditions.