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Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
Author(s) -
Ahn SeungEon,
Song Ihun,
Jeon Sanghun,
Jeon Youg Woo,
Kim Young,
Kim Changjung,
Ryu Byungki,
Lee JeHun,
Nathan Arokia,
Lee Sungsik,
Kim Gyu Tae,
Chung UIn
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200293
Subject(s) - responsivity , materials science , photodiode , optoelectronics , photodetector , oxide , thin film transistor , amorphous solid , semiconductor , metal , nanotechnology , layer (electronics) , chemistry , organic chemistry , metallurgy
The photoresponse characteristics of metal‐oxide (MeO) semiconductor photosensors have been studied. Compared to the amorphous‐Si‐based photo‐TFT, the MeO photo‐TFT demonstrates superior EQE and responsivity. However, due to its inherent slow recovery to the dark state after the illumination is stopped, a unique sensing scheme suitable for the high‐speed array operation is used, yet maintaining a simple array architecture as a solution for large‐area interactive displays.