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Flexible Control of Block Copolymer Directed Self‐Assembly using Small, Topographical Templates: Potential Lithography Solution for Integrated Circuit Contact Hole Patterning
Author(s) -
Yi He,
Bao XinYu,
Zhang Jie,
Bencher Christopher,
Chang LiWen,
Chen Xiangyu,
Tiberio Richard,
Conway James,
Dai Huixiong,
Chen Yongmei,
Mitra Subhasish,
Wong H.S. Philip
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200265
Subject(s) - template , materials science , lithography , critical dimension , copolymer , nanotechnology , electronic circuit , dimension (graph theory) , integrated circuit , block (permutation group theory) , multiple patterning , optoelectronics , resist , polymer , electrical engineering , optics , composite material , engineering , physics , mathematics , layer (electronics) , pure mathematics , geometry
Block copolymer directed self‐assembly (DSA) using small guiding templates for contact hole patterning in integrated circuits is reported. Flexible and precise DSA control of 25 nm contact holes guided by 66 nm templates for industry‐standard 22 nm static random access memory cells is experimentally demonstrated. For 22 nm random logic circuits a DSA‐aware design methodology is developed and the contact holes are achieved with a critical dimension of 15 nm and overylay accuracy of 1 nm.