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High‐Performance Air‐Stable Ambipolar Organic Field‐Effect Transistor Based on Tris(phthalocyaninato) Europium(III)
Author(s) -
Kan Jinglan,
Chen Yanli,
Qi Dongdong,
Liu Yunqi,
Jiang Jianzhuang
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201200006
Subject(s) - ambipolar diffusion , europium , organic field effect transistor , materials science , tris , transistor , phthalocyanine , derivative (finance) , field effect transistor , field (mathematics) , optoelectronics , nanotechnology , electron , electrical engineering , chemistry , physics , biochemistry , mathematics , quantum mechanics , voltage , luminescence , pure mathematics , financial economics , economics , engineering
A novel sandwich‐type tris(phthalocyaninato) europium triple‐decker complex bearing peripheral electron‐withdrawing groups (see center of figure) is used to fabricate a field‐effect transistor by the quasi‐Langmuir–Schaefer method. The air‐stable, single‐component ambipolar OFET device displays the best carrier properties of a device fabricated by solution processing of a single phthalocyanine derivative so far, which makes the complex very promising for applications in nanoelectronics.