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Organic Field‐Effect Transistors: High Electron Mobility in Air for N,N ′‐1 H ,1 H ‐Perfluorobutyldicyanoperylene Carboxydi‐imide Solution‐Crystallized Thin‐Film Transistors on Hydrophobic Surfaces (Adv. Mater. 32/2011)
Author(s) -
Soeda Junshi,
Uemura Takafumi,
Mizuno Yu,
Nakao Akiko,
Nakazawa Yasuhiro,
Facchetti Antonio,
Takeya Jun
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201190128
Subject(s) - materials science , transistor , semiconductor , thin film transistor , organic semiconductor , electron mobility , imide , electron , optoelectronics , field effect transistor , molecule , nanotechnology , polymer chemistry , organic chemistry , quantum mechanics , physics , voltage , layer (electronics) , chemistry
As reported by Antonio Facchetti, JunTakeya, and coworkers, molecules of an n‐type semiconductor PDIF‐CN 2 assemble with perfect periodicity into a molecular‐crystal plate. The plate, formed in a narrow gap from a solution, works as an excellent n‐type semiconductor. It is implemented in the best‐performing printed logic element.