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Correction: Recent Progress on ZnO‐Based Metal‐Semiconductor Field‐Effect Transistors and Their Application in Transparent Integrated Circuits
Author(s) -
Frenzel Heiko,
Lajn Alexander,
von Wenckstern Holger,
Lorenz Michael,
Schein Friedrich,
Zhang Zhipeng,
Grundmann Marius
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201190037
Subject(s) - front cover , materials science , cover (algebra) , semiconductor , nanotechnology , transistor , field effect transistor , optoelectronics , front (military) , integrated circuit , electronic circuit , field (mathematics) , engineering physics , electrical engineering , mechanical engineering , engineering , mathematics , voltage , pure mathematics
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