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Hole and Electron Extraction Layers Based on Graphene Oxide Derivatives for High‐Performance Bulk Heterojunction Solar Cells
Author(s) -
Liu Jun,
Xue Yuhua,
Gao Yunxiang,
Yu Dingshan,
Durstock Michael,
Dai Liming
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104945
Subject(s) - graphene , materials science , polymer solar cell , heterojunction , oxide , extraction (chemistry) , electron , optoelectronics , solar cell , nanotechnology , chemical engineering , organic chemistry , chemistry , physics , quantum mechanics , engineering , metallurgy
By charge neutralization of carboxylic acid groups in graphene oxide (GO) with Cs 2 CO 3 to afford Cesium‐neutralized GO (GO‐Cs), GO derivatives with appropriate modification are used as both hole‐ and electron‐extraction layers for bulk heterojunction (BHJ) solar cells. The normal and inverted devices based on GO hole‐ and GO‐Cs electron‐extraction layers both outperform the corresponding standard BHJ solar cells.