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A Graphite‐Like Zero Gap Semiconductor with an Interlayer Separation of 2.8 Å
Author(s) -
Baskey Moni,
Saha Shyamal K
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104717
Subject(s) - materials science , semiconductor , stacking , graphite , phase (matter) , absorption (acoustics) , crystal (programming language) , absorption spectroscopy , optoelectronics , nanotechnology , composite material , optics , organic chemistry , chemistry , physics , computer science , programming language
The synthesis of a highly crystalline graphite‐like new material with an interlayer separation of 2.8 Å is demonstrated by re‐stacking GO sheets in the form of a thin film. The optical absorption spectra and electrical data indicate that the new crystal phase is an indirect zero gap semiconductor.