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Epitaxial Ferroelectric Heterostructures Fabricated by Selective Area Epitaxy of SrRuO 3 Using an MgO Mask
Author(s) -
Karthik J.,
Damodaran Anoop R.,
Martin Lane W.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104697
Subject(s) - materials science , epitaxy , lithography , ferroelectricity , heterojunction , optoelectronics , photolithography , capacitor , etching (microfabrication) , nanotechnology , electrical engineering , voltage , engineering , layer (electronics) , dielectric
Illustration of a new high‐temperature hard‐mask process based on traditional lithography and selective wet‐etching of MgO. The hard mask is compatible with standard nano‐lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature‐stable contacts that give rise to low leakage, improved fatigue properties, and excellent high‐temperature stability in ferroelectric thin‐film capacitors.