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Multistate Memory Devices Based on Free‐standing VO 2 /TiO 2 Microstructures Driven by Joule Self‐Heating
Author(s) -
Pellegrino Luca,
Manca Nicola,
Kanki Teruo,
Tanaka Hidekazu,
Biasotti Michele,
Bellingeri Emilio,
Siri Antonio Sergio,
Marré Daniele
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104669
Subject(s) - materials science , joule heating , resistive random access memory , percolation (cognitive psychology) , microstructure , resistive touchscreen , thin film , current (fluid) , insulator (electricity) , mesoscopic physics , nanotechnology , optoelectronics , composite material , condensed matter physics , electrode , electrical engineering , chemistry , neuroscience , biology , physics , engineering
Two‐terminal multistate memory elements based on VO 2 /TiO 2 thin film microcantilevers are reported. Volatile and non‐volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal‐insulator transition of VO 2 . The memory mechanism is based on current‐induced creation of metallic clusters by self‐heating of micrometric suspended regions and resistive reading via percolation.