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Highly Efficient Single‐Layer Polymer Ambipolar Light‐Emitting Field‐Effect Transistors
Author(s) -
Gwinner Michael C.,
Kabra Dinesh,
Roberts Matthew,
Brenner Thomas J. K.,
Wallikewitz Bodo H.,
McNeill Christopher R.,
Friend Richard H.,
Sirringhaus Henning
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104602
Subject(s) - ambipolar diffusion , materials science , optoelectronics , exciton , oled , luminance , transistor , layer (electronics) , quenching (fluorescence) , polymer , field effect transistor , fluorescence , nanotechnology , optics , electrical engineering , condensed matter physics , plasma , voltage , composite material , physics , engineering , quantum mechanics
Single‐layer polymer light‐emitting field‐effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A −1 are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton‐polaron quenching.