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Anisotropic Charge Transport in Spherulitic Poly(3‐hexylthiophene) Films
Author(s) -
Crossland Edward J. W.,
Tremel Kim,
Fischer Florian,
Rahimi Khosrow,
Reiter Günter,
Steiner Ullrich,
Ludwigs Sabine
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104284
Subject(s) - materials science , anisotropy , crystallization , stacking , charge (physics) , polymer , grain boundary , crystal (programming language) , crystallography , chemical physics , chemical engineering , composite material , microstructure , optics , organic chemistry , chemistry , physics , quantum mechanics , computer science , programming language , engineering
Macroscopic P3HT spherulitic crystals are grown in 25‐nm‐thick films via precise control of solvent swelling during polymer crystallization, which allow placement of transistor channels within single oriented crystal domains.Charge‐transport anisotropy in the b–c (π‐stacking & main chain) plane and the role of order–disorder grain boundaries are reported.