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Theory of Piezo‐Phototronics for Light‐Emitting Diodes
Author(s) -
Zhang Yan,
Wang Zhong Lin
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104263
Subject(s) - materials science , optoelectronics , diode , light emitting diode , voltage , photon , optics , electrical engineering , physics , engineering
Devices fabricated by using the inner‐crystal piezopotential as a “gate” voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p–n junction are named piezo‐phototronics . Here, the theory of the photon emission and carrier transport behavior in piezo‐phototronic devices is investigated as a p–n junction light‐emitting diode. Numerical calculations are given for predicting the photon emission and current–voltage characteristics of a general piezo‐phototronic light‐emitting diode.