Theory of Piezo‐Phototronics for Light‐Emitting Diodes | Zendy

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Theory of Piezo‐Phototronics for Light‐Emitting Diodes

Author(s) -

Zhang Yan,

Wang Zhong Lin

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201104263

Subject(s) - materials science , optoelectronics , diode , light emitting diode , voltage , photon , optics , electrical engineering , physics , engineering

Devices fabricated by using the inner‐crystal piezopotential as a “gate” voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p–n junction are named piezo‐phototronics . Here, the theory of the photon emission and carrier transport behavior in piezo‐phototronic devices is investigated as a p–n junction light‐emitting diode. Numerical calculations are given for predicting the photon emission and current–voltage characteristics of a general piezo‐phototronic light‐emitting diode.

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