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Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM
Author(s) -
Liu Qi,
Sun Jun,
Lv Hangbing,
Long Shibing,
Yin Kuibo,
Wan Neng,
Li Yingtao,
Sun Litao,
Liu Ming
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201104104
Subject(s) - electrolyte , dissolution , resistive random access memory , materials science , oxide , anode , cathode , electrical conductor , nanotechnology , transmission electron microscopy , resistive touchscreen , electrode , chemical engineering , computer science , electrical engineering , chemistry , composite material , metallurgy , engineering , computer vision
Evolution of growth/dissolution conductive filaments (CFs) in oxide‐electrolyte‐based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide‐electrolyte is proposed.