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Direct Observations of Retention Failure in Ferroelectric Memories
Author(s) -
Gao Peng,
Nelson Christopher T.,
Jokisaari Jacob R.,
Zhang Yi,
Baek SeungHyub,
Bark Chung Wung,
Wang Enge,
Liu Yuanming,
Li Jiangyu,
Eom ChangBeom,
Pan Xiaoqing
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103983
Subject(s) - ferroelectricity , materials science , polar , polarization (electrochemistry) , data retention , non volatile memory , domain (mathematical analysis) , random access , volume (thermodynamics) , field (mathematics) , optoelectronics , computer science , nanotechnology , physics , computer network , dielectric , mathematics , chemistry , mathematical analysis , quantum mechanics , astronomy , pure mathematics
Nonvolatile ferroelectric random‐access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswiching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.