Premium
High‐Performance n‐type Organic Semiconductors: Incorporating Specific Electron‐Withdrawing Motifs to Achieve Tight Molecular Stacking and Optimized Energy Levels
Author(s) -
Yun Sun Woo,
Kim Jong H.,
Shin Seunghoon,
Yang Hoichang,
An ByeongKwan,
Yang Lin,
Park Soo Young
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103978
Subject(s) - stacking , organic field effect transistor , materials science , organic semiconductor , conjugated system , transistor , semiconductor , electron , type (biology) , optoelectronics , field effect transistor , polymer , organic chemistry , physics , chemistry , quantum mechanics , voltage , composite material , ecology , biology
Novel π–conjugated cyanostilbene‐based semiconductors (Hex‐3,5‐TFPTA and Hex‐4‐TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex‐4‐TFPTA exhibits high‐performance n‐type organic field‐effect transistor (OFET) properties with electron mobilities as high as 2.14 cm 2 V −1 s −1 and on‐off current ratios >10 6 .