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High‐Performance Ambipolar Transistors and Inverters from an Ultralow Bandgap Polymer
Author(s) -
Fan Jian,
Yuen Jonathan D.,
Wang Mingfeng,
Seifter Jason,
Seo JungHwa,
Mohebbi Ali Reza,
Zakhidov Dante,
Heeger Alan,
Wudl Fred
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103836
Subject(s) - ambipolar diffusion , materials science , transistor , optoelectronics , band gap , polymer , thin film transistor , inverter , electron mobility , nanotechnology , electron , electrical engineering , voltage , composite material , physics , layer (electronics) , quantum mechanics , engineering
High mobility ambipolor organic thin‐film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm 2 V −1 s −1 and 0.7 cm 2 V −1 s −1 , respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35.