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Microstructures of GaN Thin Films Grown on Graphene Layers
Author(s) -
Yoo Hyobin,
Chung Kunook,
Choi Yong Seok,
Kang Chan Soon,
Oh Kyu Hwan,
Kim Miyoung,
Yi GyuChul
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103829
Subject(s) - materials science , transmission electron microscopy , graphene , microstructure , dislocation , thin film , grain boundary , optoelectronics , nanotechnology , composite material
Plan‐view and cross‐sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross‐sectional transmission electron microscopy, are also discussed.