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Multilevel Data Storage Memory Using Deterministic Polarization Control
Author(s) -
Lee Daesu,
Yang Sang Mo,
Kim Tae Heon,
Jeon Byung Chul,
Kim Yong Su,
Yoon JongGul,
Lee Ho Nyung,
Baek Seung Hyup,
Eom Chang Beom,
Noh Tae Won
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103679
Subject(s) - ferroelectricity , polarization (electrochemistry) , computer data storage , information storage , non volatile memory , materials science , computer science , optoelectronics , information retrieval , computer hardware , chemistry , dielectric
Multilevel non‐volatile memory for high‐density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin‐film system, eight stable and reproducible polarization states are realized (i.e., 3‐bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.