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Mica, a Potential Two‐Dimensional‐Crystal Gate Insulator for Organic Field‐Effect Transistors
Author(s) -
He Yudong,
Dong Huanli,
Meng Qing,
Jiang Lang,
Shao Wei,
He Liangfu,
Hu Wenping
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103592
Subject(s) - mica , materials science , transistor , optoelectronics , insulator (electricity) , field effect transistor , organic electronics , exfoliation joint , crystal (programming language) , electronics , nanotechnology , voltage , electrical engineering , composite material , graphene , computer science , programming language , engineering
2D mica crystals (with thickness < 100 nm) obtained by mechanical exfoliation are incorporated for the first time into the design of organic thin film field‐effect transistor arrays and organic single crystal transistors as a gate insulator. The size of mica crystals could be up to the dimensions of an A4 piece of paper. All devices so fabricated exhibited high mobility and low operating voltage, indicating the high quality of the crystals and the great potential of mica crystals as a flexible, low‐cost, transparent insulator for organic electronics.