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Solution Processable Low‐Voltage Organic Thin Film Transistors with High‐ k Relaxor Ferroelectric Polymer as Gate Insulator
Author(s) -
Li Jinhua,
Sun Zhenhua,
Yan Feng
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103542
Subject(s) - materials science , ferroelectric polymers , dielectric , polymer , ferroelectricity , optoelectronics , high κ dielectric , transistor , thin film transistor , low voltage , voltage , nanotechnology , electrical engineering , composite material , layer (electronics) , engineering
A relaxor ferroelectric polymer poly(vinylidene fluoride‐trifluoroethylene‐chlorofloroethylene) exhibits a high relative dielectric constant ( k ) (∼60). The high‐ k polymer is used successfully in solution processable low‐voltage OTFTs as the gate insulator for the first time. Both n‐channel and p‐channel OTFTs based on conjugated polymers are fabricated and show carrier mobilities higher than 0.1 cm 2 V −1 s −1 at an operating voltage of 3 V.