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Magnetoresistance Switch Effect of a Sn‐Doped Bi 2 Te 3 Topological Insulator
Author(s) -
Zhang Hong Bin,
Yu Hai Lin,
Bao Ding Hua,
Li Shu Wei,
Wang Cheng Xin,
Yang Guo Wei
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103530
Subject(s) - magnetoresistance , materials science , topological insulator , doping , condensed matter physics , insulator (electricity) , magnetic field , topology (electrical circuits) , optoelectronics , physics , electrical engineering , engineering , quantum mechanics
A reproducible and steady magnetoresistance switch effect of Sn‐doped Bi 2 Te 3 topological insulator films with a Pt/Sn‐doped Bi 2 Te 3 /Pt structure is observed when a parallel magnetic field is applied.
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