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Control of Efficiency, Brightness, and Recombination Zone in Light‐Emitting Field Effect Transistors
Author(s) -
Hsu Ben B.Y.,
Duan Chunhui,
Namdas Ebinazar B.,
Gutacker Andrea,
Yuen Jonathan D.,
Huang Fei,
Cao Yong,
Bazan Guillermo C.,
Samuel Ifor D. W.,
Heeger Alan J.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103513
Subject(s) - ambipolar diffusion , brightness , materials science , optoelectronics , transistor , current (fluid) , channel (broadcasting) , field effect transistor , electrode , optics , voltage , electrical engineering , physics , electron , quantum mechanics , engineering
The split‐gate light emitting field effect transistors (SG‐LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.