Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping | Zendy

Park Jaesung | Zendy; Jo Sae Byeok | Zendy; Yu YoungJun | Zendy; Kim Youngsoo | Zendy; Yang Jae Won | Zendy; Lee Wi Hyoung | Zendy; Kim Hyun Ho | Zendy; Hong Byung Hee | Zendy; Kim Philip | Zendy; Cho Kilwon | Zendy; Kim Kwang S. | Zendy

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Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

Author(s) -

Park Jaesung,

Jo Sae Byeok,

Yu YoungJun,

Kim Youngsoo,

Yang Jae Won,

Lee Wi Hyoung,

Kim Hyun Ho,

Hong Byung Hee,

Kim Philip,

Cho Kilwon,

Kim Kwang S.

Publication year - 2012

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201103411

Subject(s) - bilayer graphene , materials science , monolayer , dopant , doping , graphene , bilayer , band gap , nanotechnology , dual (grammatical number) , transistor , optoelectronics , field (mathematics) , voltage , electrical engineering , membrane , chemistry , art , biochemistry , literature , engineering , mathematics , pure mathematics

Dual doping‐driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field‐effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4‐TCNQ and NH 2 ‐functionalized self‐assembled monolayers (SAMs)) even in a single‐gate device structure.

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