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Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
Author(s) -
Park Jaesung,
Jo Sae Byeok,
Yu YoungJun,
Kim Youngsoo,
Yang Jae Won,
Lee Wi Hyoung,
Kim Hyun Ho,
Hong Byung Hee,
Kim Philip,
Cho Kilwon,
Kim Kwang S.
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103411
Subject(s) - bilayer graphene , materials science , monolayer , dopant , doping , graphene , bilayer , band gap , nanotechnology , dual (grammatical number) , transistor , optoelectronics , field (mathematics) , voltage , electrical engineering , membrane , chemistry , art , biochemistry , literature , engineering , mathematics , pure mathematics
Dual doping‐driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field‐effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4‐TCNQ and NH 2 ‐functionalized self‐assembled monolayers (SAMs)) even in a single‐gate device structure.