Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor | Zendy

Miao Feng | Zendy; Strachan John Paul | Zendy; Yang J. Joshua | Zendy; Zhang MinXian | Zendy; Goldfarb Ilan | Zendy; Torrezan Antonio C. | Zendy; Eschbach Peter | Zendy; Kelley Ronald D. | Zendy; MedeirosRibeiro Gilberto | Zendy; Williams R. Stanley | Zendy

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Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

Author(s) -

Miao Feng,

Strachan John Paul,

Yang J. Joshua,

Zhang MinXian,

Goldfarb Ilan,

Torrezan Antonio C.,

Eschbach Peter,

Kelley Ronald D.,

MedeirosRibeiro Gilberto,

Williams R. Stanley

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201103379

Subject(s) - resistive random access memory , materials science , nanoscopic scale , memristor , amorphous solid , thermal conduction , channel (broadcasting) , nanotechnology , mechanism (biology) , resistive touchscreen , optoelectronics , electrode , composite material , electronic engineering , electrical engineering , crystallography , computer science , telecommunications , philosophy , chemistry , epistemology , engineering

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta 2 O 5 is observed. Structural and chemical analysis of the channel combined with temperature‐dependent transport measurements indicate a unique resistance switching mechanism.

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