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Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor
Author(s) -
Miao Feng,
Strachan John Paul,
Yang J. Joshua,
Zhang MinXian,
Goldfarb Ilan,
Torrezan Antonio C.,
Eschbach Peter,
Kelley Ronald D.,
MedeirosRibeiro Gilberto,
Williams R. Stanley
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103379
Subject(s) - resistive random access memory , materials science , nanoscopic scale , memristor , amorphous solid , thermal conduction , channel (broadcasting) , nanotechnology , mechanism (biology) , resistive touchscreen , optoelectronics , electrode , composite material , electronic engineering , electrical engineering , crystallography , computer science , telecommunications , philosophy , chemistry , epistemology , engineering
By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta 2 O 5 is observed. Structural and chemical analysis of the channel combined with temperature‐dependent transport measurements indicate a unique resistance switching mechanism.