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Near‐Room‐Temperature Mid‐Infrared Quantum Well Photodetector
Author(s) -
Hinds Sean,
Buchanan Margaret,
Dudek Richard,
Haffouz Sofiane,
Laframboise Sylvain,
Wasilewski Zbigniew,
Liu H. C.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103372
Subject(s) - materials science , photodetector , infrared , optoelectronics , quantum well infrared photodetector , specific detectivity , quantum yield , reproducibility , optics , quantum well , dark current , fluorescence , laser , statistics , physics , mathematics
We demonstrate InGaAs mid‐infrared quantum well infrared photodetectors (MIR PV‐QWIPs) that enable cost‐effective mature GaAs‐based detection and imaging technologies, with exceptional material uniformity, reproducibility, and yield, over a large area, with high spectral selectivity, innate polarization sensitivity, radiation hardness, high detectivity, and high speed operation at TEC temperatures without bias.