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Vacuum Lamination Approach to Fabrication of High‐Performance Single‐Crystal Organic Field‐Effect Transistors
Author(s) -
Yi H. T.,
Chen Y.,
Czelen K.,
Podzorov V.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103305
Subject(s) - materials science , fabrication , lamination , single crystal , field effect transistor , transistor , optoelectronics , dielectric , crystal (programming language) , ultra high vacuum , organic semiconductor , nanotechnology , organic field effect transistor , crystallography , electrical engineering , medicine , programming language , chemistry , alternative medicine , engineering , layer (electronics) , pathology , voltage , computer science
A novel vacuum lamination approach to fabrication of high‐performance single‐crystal organic field‐effect transistors has been developed. The non‐destructive nature of this method allows a direct comparison of field‐effect mobilities achieved with various gate dielectrics using the same single‐crystal sample. The method also allows gating delicate systems, such as n ‐type crystals and SAM‐coated surfaces, without perturbation.