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Combinatorial Optimization of a Molecular Glass Photoresist System for Electron Beam Lithography
Author(s) -
Bauer WolfgangAndreas C.,
Neuber Christian,
Ober Christopher K.,
Schmidt HansWerner
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201103107
Subject(s) - resist , photoresist , materials science , electron beam lithography , lithography , cathode ray , ternary operation , nanotechnology , nanostructure , electron , optoelectronics , layer (electronics) , computer science , physics , quantum mechanics , programming language
Electron beam lithography is a powerful technique for the production of nanostructures but pattern quality depends on numerous interacting process variables. Orthogonal gradients of resist composition, baking temperatures, and development time as well as dose variations inside writing fields are used to prepare ternary combinatorial libraries for an efficient stepwise optimization of a molecular glass negative tone resist system.