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Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch −2
Author(s) -
Xu Ji,
Hong Sung Woo,
Gu Weiyin,
Lee Kim Y.,
Kuo David S.,
Xiao Shuaigang,
Russell Thomas P.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201102964
Subject(s) - nanodot , materials science , area density , fabrication , annealing (glass) , silicon , lithography , silicon oxide , nanotechnology , etching (microfabrication) , oxide , black silicon , optoelectronics , layer (electronics) , composite material , metallurgy , medicine , silicon nitride , alternative medicine , pathology
The combination of solvent annealing, surface reconstruction, and a tone‐reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano‐dots on a surface. The obtained silicon oxide nano‐dots feature an areal density of 1.3 teradots inch −2 .