Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch −2 | Zendy

Xu Ji | Zendy; Hong Sung Woo | Zendy; Gu Weiyin | Zendy; Lee Kim Y. | Zendy; Kuo David S. | Zendy; Xiao Shuaigang | Zendy; Russell Thomas P. | Zendy

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Fabrication of Silicon Oxide Nanodots with an Areal Density Beyond 1 Teradots Inch −2

Author(s) -

Xu Ji,

Hong Sung Woo,

Gu Weiyin,

Lee Kim Y.,

Kuo David S.,

Xiao Shuaigang,

Russell Thomas P.

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201102964

Subject(s) - nanodot , materials science , area density , fabrication , annealing (glass) , silicon , lithography , silicon oxide , nanotechnology , etching (microfabrication) , oxide , black silicon , optoelectronics , layer (electronics) , composite material , metallurgy , medicine , silicon nitride , alternative medicine , pathology

The combination of solvent annealing, surface reconstruction, and a tone‐reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano‐dots on a surface. The obtained silicon oxide nano‐dots feature an areal density of 1.3 teradots inch −2 .

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