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Diameter‐Dependent Performance of Single‐Walled Carbon Nanotube Thin‐Film Transistors
Author(s) -
Asada Yuki,
Nihey Fumiyuki,
Ohmori Shigekazu,
Shinohara Hisanori,
Saito Takeshi
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201102806
Subject(s) - materials science , carbon nanotube , conductance , percolation (cognitive psychology) , tube (container) , thin film transistor , carbon nanotube field effect transistor , transistor , nanotube , nanotechnology , percolation threshold , excited state , optoelectronics , composite material , condensed matter physics , electrical resistivity and conductivity , field effect transistor , layer (electronics) , atomic physics , electrical engineering , voltage , physics , engineering , neuroscience , biology
Single‐walled carbon nanotube thin‐film transistors (SWCNT‐TFTs) with various tube diameters and constant tube length are investigated. Similar variations of on‐currents, independent of the diameter, are demonstrated according to percolation theory, but off‐currents significantly depend on the diameter. The temperature dependence of the off‐currents attributes the observed non‐negligible off‐state conductance to thermally excited carriers in semiconducting SWCNTs.