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High‐Performance Ambipolar Diketopyrrolopyrrole‐Thieno[3,2‐ b ]thiophene Copolymer Field‐Effect Transistors with Balanced Hole and Electron Mobilities
Author(s) -
Chen Zhuoying,
Lee Mi Jung,
Shahid Ashraf Raja,
Gu Yun,
AlbertSeifried Sebastian,
Meedom Nielsen Martin,
Schroeder Bob,
Anthopoulos Thomas D.,
Heeney Martin,
McCulloch Iain,
Sirringhaus Henning
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201102786
Subject(s) - ambipolar diffusion , materials science , thiophene , conjugated system , copolymer , electron mobility , polymer , transistor , electron , field effect transistor , optoelectronics , nanotechnology , organic chemistry , electrical engineering , chemistry , voltage , physics , quantum mechanics , composite material , engineering
Ambipolar OFETs with balanced hole and electron field‐effect mobilities both exceeding 1 cm 2 V −1 s −1 are achieved based on a single‐solution‐processed conjugated polymer, DPPT‐TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high‐performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies.