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Effective Mobility Enhancement by Using Nanometer Dot Doping in Amorphous IGZO Thin‐Film Transistors
Author(s) -
Zan HsiaoWen,
Tsai WuWei,
Chen ChiaHsin,
Tsai ChuangChuang
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201102530
Subject(s) - materials science , nanodot , thin film transistor , doping , nanometre , amorphous solid , optoelectronics , nanotechnology , thin film , electron mobility , transistor , indium , layer (electronics) , electrical engineering , crystallography , composite material , chemistry , engineering , voltage
Applying nanometer dot‐like doping to the channel region causes the intrinsic and effective mobilities of amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor to increase. The nanodot doping reduces the effective channel length and lowers the energy barrier to facilitate electron transport in the a‐IGZO film.