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Oxide Double‐Layer Nanocrossbar for Ultrahigh‐Density Bipolar Resistive Memory
Author(s) -
Chang Seo Hyoung,
Lee Shin Buhm,
Jeon Dae Young,
Park So Jung,
Kim Gyu Tae,
Yang Sang Mo,
Chae Seung Chul,
Yoo Hyang Keun,
Kang Bo Soo,
Lee MyoungJae,
Noh Tae Won
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201102395
Subject(s) - stacking , materials science , resistive touchscreen , oxide , path (computing) , layer (electronics) , optoelectronics , resistive random access memory , thin film , nanotechnology , computer science , electrical engineering , physics , computer network , nuclear magnetic resonance , operating system , voltage , engineering , metallurgy
A TiO 2 /VO 2 oxide double‐layer nanocrossbar to overcome the sneak path problem in bipolar resistive memory is proposed. TiO 2 and VO 2 thin films function as a bipolar resistive memory and a bidirectional switch, respectively. The new structure suggests that ultrahigh densities can be achieved with a 2D nanocrossbar array layout. By stacking into a 3D structure, the density can be even higher.