Premium
Complementary Metal Oxide Semiconductor Technology With and On Paper
Author(s) -
Martins Rodrigo,
Nathan Arokia,
Barros Raquel,
Pereira Luís,
Barquinha Pedro,
Correia Nuno,
Costa Ricardo,
Ahnood Arman,
Ferreira Isabel,
Fortunato Elvira
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201102232
Subject(s) - materials science , substrate (aquarium) , oxide , semiconductor , optoelectronics , cmos , metal , electrode , nanotechnology , electrical conductor , dielectric , metallurgy , composite material , chemistry , oceanography , geology
A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n‐(In‐Ga‐Zn‐O) and p‐type (SnO x ) active oxide semiconductors and uses a transparent conductive oxide (In‐Zn‐O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.