Complementary Metal Oxide Semiconductor Technology With and On Paper | Zendy

Martins Rodrigo | Zendy; Nathan Arokia | Zendy; Barros Raquel | Zendy; Pereira Luís | Zendy; Barquinha Pedro | Zendy; Correia Nuno | Zendy; Costa Ricardo | Zendy; Ahnood Arman | Zendy; Ferreira Isabel | Zendy; Fortunato Elvira | Zendy

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Complementary Metal Oxide Semiconductor Technology With and On Paper

Author(s) -

Martins Rodrigo,

Nathan Arokia,

Barros Raquel,

Pereira Luís,

Barquinha Pedro,

Correia Nuno,

Costa Ricardo,

Ahnood Arman,

Ferreira Isabel,

Fortunato Elvira

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201102232

Subject(s) - materials science , substrate (aquarium) , oxide , semiconductor , optoelectronics , cmos , metal , electrode , nanotechnology , electrical conductor , dielectric , metallurgy , composite material , chemistry , oceanography , geology

A complementary metal oxide semiconductor (CMOS) device is described. The device is based on n‐(In‐Ga‐Zn‐O) and p‐type (SnO x ) active oxide semiconductors and uses a transparent conductive oxide (In‐Zn‐O) as gate electrode that sits on a flexible, recyclable paper substrate that is simultaneously the substrate and the dielectric.

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