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High‐Current‐Density Monolayer CdSe/ZnS Quantum Dot Light‐Emitting Devices with Oxide Electrodes
Author(s) -
Likovich Edward M.,
Jaramillo Rafael,
Russell Kasey J.,
Ramanathan Shriram,
Narayanamurti Venkatesh
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101782
Subject(s) - quantum dot , materials science , optoelectronics , monolayer , current (fluid) , atomic layer deposition , electrode , current density , deposition (geology) , nanotechnology , semiconductor , light emitting diode , layer (electronics) , oxide , light emission , quantum yield , optics , fluorescence , electrical engineering , chemistry , physics , engineering , quantum mechanics , metallurgy , paleontology , sediment , biology
Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light‐emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.