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Polyelectrolyte‐Gated Organic Complementary Circuits Operating at Low Power and Voltage
Author(s) -
Herlogsson Lars,
Crispin Xavier,
Tierney Steve,
Berggren Magnus
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101757
Subject(s) - materials science , transistor , electronic circuit , optoelectronics , voltage , polyelectrolyte , low voltage , thin film transistor , power consumption , threshold voltage , power (physics) , nanotechnology , electrical engineering , layer (electronics) , physics , quantum mechanics , composite material , engineering , polymer
Organic complementary inverters and ring oscillators based on polyelectrolyte‐gated thin‐film transistors are demonstrated. Detrimental electrochemical doping is suppressed by using polyanionic and polycationic gate insulators in the p ‐ and n ‐channel transistors, respectively. The circuits operate at supply voltages between 0.2 V and 1.5 V, have a static power consumption of less than 2.5 nW per logic gate and show propagation delays down to 0.26 ms per stage.