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Simulation of Vapor‐Phase Deposition and Growth of a Pentacene Thin Film on C 60 (001)
Author(s) -
Muccioli Luca,
D'Avino Gabriele,
Zani Claudio
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101652
Subject(s) - pentacene , materials science , monolayer , thin film , fullerene , heterojunction , deposition (geology) , semiconductor , chemical vapor deposition , organic semiconductor , phase (matter) , nanotechnology , optoelectronics , chemical physics , layer (electronics) , thin film transistor , organic chemistry , physics , chemistry , paleontology , sediment , biology
The formation of the heterojunction between two organic semiconductors , pentacene on top of Buckminster fullerene, is simulated using a virtual vapor deposition experiment. The thin‐film growth is characterized by a lying‐to‐standing collective reorientation of pentacene molecules, corresponding to the onset of crystalline order. The mechanism is coverage dependent and reorientation occurs earlier for the second monolayer.