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Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors
Author(s) -
Spijkman MarkJan,
Myny Kris,
Smits Edsger C. P.,
Heremans Paul,
Blom Paul W. M.,
de Leeuw Dago M.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101493
Subject(s) - materials science , gate dielectric , optoelectronics , thin film transistor , transistor , electronic circuit , semiconductor , threshold voltage , sensitivity (control systems) , field effect transistor , logic gate , isfet , integrated circuit , dielectric , nanotechnology , electrical engineering , voltage , electronic engineering , engineering , layer (electronics)
The first dual‐gate thin‐film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a ‐Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate. The main advantage is that the threshold voltage can be set as a function of the applied second gate bias. The shift depends on the ratio of the capacitances of the two gate dielectrics. Here we review the fast growing field of DGTFTs. We summarize the reported operational mechanisms, and the application in logic gates and integrated circuits. The second emerging application of DGTFTs is sensitivity enhancement of existing ion‐sensitive field‐effect transistors (ISFET). The reported sensing mechanism is discussed and an outlook is presented.