High Electron Mobility in Air for  N,N ′‐1 H ,1 H ‐Perfluorobutyldicyanoperylene Carboxydi‐imide Solution‐Crystallized Thin‐Film Transistors on Hydrophobic Surfaces | Zendy

Soeda Junshi | Zendy; Uemura Takafumi | Zendy; Mizuno Yu | Zendy; Nakao Akiko | Zendy; Nakazawa Yasuhiro | Zendy; Facchetti Antonio | Zendy; Takeya Jun | Zendy

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High Electron Mobility in Air for N,N ′‐1 H ,1 H ‐Perfluorobutyldicyanoperylene Carboxydi‐imide Solution‐Crystallized Thin‐Film Transistors on Hydrophobic Surfaces

Author(s) -

Soeda Junshi,

Uemura Takafumi,

Mizuno Yu,

Nakao Akiko,

Nakazawa Yasuhiro,

Facchetti Antonio,

Takeya Jun

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201101467

Subject(s) - materials science , imide , electron mobility , thin film transistor , transistor , electron , chemical engineering , polymer chemistry , nanotechnology , optoelectronics , electrical engineering , layer (electronics) , engineering , voltage , physics , quantum mechanics

High‐mobility and air‐stable n ‐type organic field transistors based on solution‐crystallized N , N ′‐1 H ,1 H ‐perfluorobutyldicyanoperylene carboxydi‐imide (PDIF‐ CN 2 ) are developed. Electron mobility as high as 1.3 cm 2 V −1 s −1 is achieved owing to the almost‐perfect periodic crystal packing.

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