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High Electron Mobility in Air for N,N ′‐1 H ,1 H ‐Perfluorobutyldicyanoperylene Carboxydi‐imide Solution‐Crystallized Thin‐Film Transistors on Hydrophobic Surfaces
Author(s) -
Soeda Junshi,
Uemura Takafumi,
Mizuno Yu,
Nakao Akiko,
Nakazawa Yasuhiro,
Facchetti Antonio,
Takeya Jun
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101467
Subject(s) - materials science , imide , electron mobility , thin film transistor , transistor , electron , chemical engineering , polymer chemistry , nanotechnology , optoelectronics , electrical engineering , layer (electronics) , engineering , voltage , physics , quantum mechanics
High‐mobility and air‐stable n ‐type organic field transistors based on solution‐crystallized N , N ′‐1 H ,1 H ‐perfluorobutyldicyanoperylene carboxydi‐imide (PDIF‐ CN 2 ) are developed. Electron mobility as high as 1.3 cm 2 V −1 s −1 is achieved owing to the almost‐perfect periodic crystal packing.