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Ambipolar Oxide Thin‐Film Transistor
Author(s) -
Nomura Kenji,
Kamiya Toshio,
Hosono Hideo
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101410
Subject(s) - ambipolar diffusion , thin film transistor , transistor , inverter , oxide , materials science , optoelectronics , channel (broadcasting) , saturation (graph theory) , nanotechnology , electrical engineering , voltage , physics , layer (electronics) , engineering , plasma , mathematics , quantum mechanics , combinatorics , metallurgy
The first ambipolar oxide‐based thin‐film transistor (TFT) using an SnO channel is presented , demonstrating operation of a complementary‐like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10 −4 cm 2 V −1 s −1 are obtained for the p‐channel and n‐channel modes, respectively, and the inverter shows a maximum voltage gain of 2.5. This is the first demonstration of a complementary‐like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.