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Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2 O 5 Via a Rapid Screening Technique
Author(s) -
Periasamy Prakash,
Berry Joseph J.,
Dameron Arrelaine A.,
Bergeson Jeremy D.,
Ginley David S.,
O'Hayre Ryan P.,
Parilla Philip A.
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201101115
Subject(s) - materials science , diode , optoelectronics , fabrication , responsivity , rectification , hysteresis , work function , voltage , nanotechnology , photodetector , electrical engineering , engineering , physics , quantum mechanics , layer (electronics) , medicine , alternative medicine , pathology
A novel and facile fabrication technique using a bent‐wire (M2) point‐contact configuration is used to fabricate and analyze different metal‐insulator‐metal (M1/I/M2) diode systems based on Nb/Nb 2 O 5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb 2 O 5 /Pt, Nb/Nb 2 O 5 /Au, Nb/Nb 2 O 5 /Ag and Nb/Nb 2 O 5 /Cu demonstrating significant promise for ultra‐fast rectification applications. The asymmetry and non‐linearity values of the Nb/Nb 2 O 5 /Pt are 1500 and 4 at 0.5 V, respectively.