Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2 O 5  Via a Rapid Screening Technique | Zendy

Periasamy Prakash | Zendy; Berry Joseph J. | Zendy; Dameron Arrelaine A. | Zendy; Bergeson Jeremy D. | Zendy; Ginley David S. | Zendy; O'Hayre Ryan P. | Zendy; Parilla Philip A. | Zendy

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Fabrication and Characterization of MIM Diodes Based on Nb/Nb 2 O 5 Via a Rapid Screening Technique

Author(s) -

Periasamy Prakash,

Berry Joseph J.,

Dameron Arrelaine A.,

Bergeson Jeremy D.,

Ginley David S.,

O'Hayre Ryan P.,

Parilla Philip A.

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201101115

Subject(s) - materials science , diode , optoelectronics , fabrication , responsivity , rectification , hysteresis , work function , voltage , nanotechnology , photodetector , electrical engineering , engineering , physics , quantum mechanics , layer (electronics) , medicine , alternative medicine , pathology

A novel and facile fabrication technique using a bent‐wire (M2) point‐contact configuration is used to fabricate and analyze different metal‐insulator‐metal (M1/I/M2) diode systems based on Nb/Nb 2 O 5 (M1/I), enabling a study of work function influence on diode behavior. Excellent diode performance is achieved for Nb/Nb 2 O 5 /Pt, Nb/Nb 2 O 5 /Au, Nb/Nb 2 O 5 /Ag and Nb/Nb 2 O 5 /Cu demonstrating significant promise for ultra‐fast rectification applications. The asymmetry and non‐linearity values of the Nb/Nb 2 O 5 /Pt are 1500 and 4 at 0.5 V, respectively.

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