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Topological Insulator Thin Films of Bi 2 Te 3 with Controlled Electronic Structure
Author(s) -
Wang Guang,
Zhu XieGang,
Sun YiYang,
Li YaoYi,
Zhang Tong,
Wen Jing,
Chen Xi,
He Ke,
Wang LiLi,
Ma XuCun,
Jia JinFeng,
Zhang Shengbai B.,
Xue QiKun
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201100678
Subject(s) - molecular beam epitaxy , topological insulator , materials science , thin film , doping , electronic structure , epitaxy , topology (electrical circuits) , optoelectronics , surface states , insulator (electricity) , nanotechnology , condensed matter physics , surface (topology) , physics , electrical engineering , engineering , layer (electronics) , geometry , mathematics
Topological insulator thin films of Bi 2 Te 3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy (MBE) growth kinetics without any extrinsic doping. N‐ to p‐type conversion results from the change in the concentrations of Te Bi donors and Bi Te acceptors. This represents a step toward controlling topological surface states, with potential applications in devices.