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Host and Dopant Materials for Idealized Deep‐Red Organic Electrophosphorescence Devices
Author(s) -
Fan ChunHsiang,
Sun Peipei,
Su TsuHui,
Cheng ChienHong
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201100610
Subject(s) - materials science , dopant , doping , electronic materials , optoelectronics , nanotechnology
An idealized bipolar host material and dopant are synthesized for deep‐red phosphorescent organic light‐emitting diodes (PhOLEDs). The host material exhibits a low‐lying lowest unoccupied molecular orbital and high thermal and morphological stability, while the dopant emits sharply at 616 nm with a full width at half‐maximum of only 39 nm. The new host/guest combination for the deep‐red device yields the highest device efficiencies to date.