Premium
High‐Performance Graphene Devices on SiO 2 /Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers
Author(s) -
Wang Xiaomu,
Xu JianBin,
Wang Chengliang,
Du Jun,
Xie Weiguang
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201100476
Subject(s) - graphene , materials science , monolayer , substrate (aquarium) , nanotechnology , self assembled monolayer , doping , carrier scattering , optoelectronics , electron mobility , scattering , optics , oceanography , physics , geology
A SiO 2 /Si substrate modified by an octadecyltrimethoxysilane (OTMS) self‐assembled monolayer is used to obtain high‐quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm 2 V −1 s −1 . The findings will pave the way for approaching the intrinsic properties of supported graphene, elucidating the scattering origins, and gaining a better understanding of the mechanism of carrier transport in graphene.