High‐Performance Graphene Devices on SiO 2 /Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers | Zendy

Wang Xiaomu | Zendy; Xu JianBin | Zendy; Wang Chengliang | Zendy; Du Jun | Zendy; Xie Weiguang | Zendy

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High‐Performance Graphene Devices on SiO 2 /Si Substrate Modified by Highly Ordered Self‐Assembled Monolayers

Author(s) -

Wang Xiaomu,

Xu JianBin,

Wang Chengliang,

Du Jun,

Xie Weiguang

Publication year - 2011

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201100476

Subject(s) - graphene , materials science , monolayer , substrate (aquarium) , nanotechnology , self assembled monolayer , doping , carrier scattering , optoelectronics , electron mobility , scattering , optics , oceanography , physics , geology

A SiO 2 /Si substrate modified by an octadecyltrimethoxysilane (OTMS) self‐assembled monolayer is used to obtain high‐quality graphene devices with low intrinsic doping level. The carrier mobility can reach 47 000 cm 2 V −1 s −1 . The findings will pave the way for approaching the intrinsic properties of supported graphene, elucidating the scattering origins, and gaining a better understanding of the mechanism of carrier transport in graphene.

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