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Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal‐Transfer Method
Author(s) -
Kim Jin Ju,
Cho Byungjin,
Kim Ki Seok,
Lee Takhee,
Jung Gun Young
Publication year - 2011
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201100081
Subject(s) - materials science , characterization (materials science) , resistive touchscreen , nanometre , optoelectronics , crossbar switch , nanotechnology , resistive random access memory , non volatile memory , electronic engineering , electrical engineering , voltage , composite material , engineering
Unipolar organic resistive memory devices with cell sizes of 2 μm and 100 nm are demonstrated by a nonaqueous direct metal‐transfer (DMT) method, presenting high ON/OFF ratios and reliable memory performance. The developed DMT method can be extensively utilized to fabricate crossbar array devices with nanometer scale junctions, demonstrating the feasibility of highly integrated organic memory device applications.